A generalized model is presented for describing point defect and amorphous phase generation kinetics during ion implantation into silicon. The model considers the heterogeneity of the damage clusters by dividing them into three different areas: into an amorphous core (a-Si), an inner periphery of high point defect concentration (undetectable by BPR), and an outer periphery of low point defect concentration (detectable by EPR). Weil-known experimental BPR results may be interpreted by this model.