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Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

 

作者: J. Cibert,   P. M. Petroff,   G. J. Dolan,   S. J. Pearton,   A. C. Gossard,   J. H. English,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 19  

页码: 1275-1277

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97384

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs‐GaAlAs system. Low‐temperature cathodoluminescence measurements show new luminescence lines attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.

 

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