Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition
作者:
S. S. Bose,
I. Szafranek,
M. H. Kim,
G. E. Stillman,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 8
页码: 752-754
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102702
出版商: AIP
数据来源: AIP
摘要:
Zn and an unidentified acceptor species, labeledA1, are the only residual acceptors that have been observed in a wide variety of undoped high‐purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free‐exciton recombination occur at the same energy as the donor/conduction band‐to‐acceptor peaks for C acceptors in low‐temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C‐related transitions.
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