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Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C

 

作者: J. P. Donnelly,   W. T. Lindley,   C. E. Hurwitz,  

 

期刊: Applied Physics Letters  （AIP Available online 1975）
卷期: Volume 27, issue 1  

页码: 41-43

 

ISSN:0003-6951

 

年代: 1975

 

DOI:10.1063/1.88260

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A pyrolytic Si3N4encapsulation technique has been used to permit reproducible annealing of implanted GaAs at temperatures as high as 950 °C. At low doses, electrical activity ≳70% has been achieved for both Si and Se. At high doses, sheet carrier concentrations and sheet resistivities of 1.8×1014/cm2and 20 &OHgr;/&laplac;, respectively, for Si and 7×1013/cm2and 44 &OHgr;/&laplac;, respectively, for Se have been measured.

 

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