Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
作者:
Yoichi Kawakami,
Zhi Gang Peng,
Yukio Narukawa,
Shizuo Fujita,
Shigeo Fujita,
Shuji Nakamura,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1414-1416
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117599
出版商: AIP
数据来源: AIP
摘要:
Time‐resolved photoluminescence (PL) spectroscopy has been performed at 18 K on excitonic‐related emissions in an unintentionally doped hexagonal GaN epitaxial layer grown by two‐flow metalorganic chemical vapor deposition (TF‐MOCVD). Under low excitation condition, radiative recombination ofAfree exciton (EXA: 3.4921 eV) and neutral shallow‐acceptor bound exciton [(A0s,X): 3.4805 eV] dominated the spectrum. Decay time of (A0s,X) emission is relatively long (585 ps) indicating a small number of non‐radiative centers in the layer. At higher excitation densities, new PL peak appeared at 3.4864 eV and grew superlinearly with excitation densities. These features, combined with their transient behavior, suggest that this new emission band is due to the biexciton recombination. ©1996 American Institute of Physics.
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