首页   按字顺浏览 期刊浏览 卷期浏览 Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP sem...
Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires

 

作者: B. E. Maile,   A. Forchel,   R. Germann,   D. Gru¨tzmacher,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 16  

页码: 1552-1554

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101327

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated the lateral width (Lx) dependence of the quantum efficiency of the excitonic recombination in etched InGaAs/InP wires (40 nm≤Lx≤5 &mgr;m). The analysis of data obtained at different temperatures implies that the intensity decay observed for narrow wires is due to the formation of an optically inactive (‘‘dead’’) layer and due to surface recombination.

 

点击下载:  PDF (368KB)



返 回