Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures
作者:
K. V. Shcheglov,
C. M. Yang,
K. J. Vahala,
Harry A. Atwater,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 6
页码: 745-747
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114080
出版商: AIP
数据来源: AIP
摘要:
Electroluminescent devices were fabricated in SiO2films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h. ©1995 American Institute of Physics.
点击下载:
PDF
(175KB)
返 回