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High‐brightness green‐emitting electroluminescent devices with ZnS:Tb,F active layers

 

作者: T. Ogura,   A. Mikami,   K. Tanaka,   K. Taniguchi,   M. Yoshida,   S. Nakajima,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 23  

页码: 1570-1571

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96870

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin‐film electroluminescent devices with rf‐sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only the concentration ratio but also the terbium concentration, a brightness more than 300 fL is obtained under 1 kHz pulse excitation.

 

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