High‐qualityp‐type HgCdTe grown by molecular beam epitaxy
作者:
P. S. Wijewarnasuriya,
M. Boukerche,
J. P. Faurie,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 2
页码: 859-862
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345743
出版商: AIP
数据来源: AIP
摘要:
The galvanomagnetic transport in (111)B HgCdTep‐type layers, grown by molecular beam epitaxy, was studied as a function of temperature and magnetic field strength. Experimental data on the Hall coefficient and conductivity tensor versus magnetic field have been analyzed with the assumption of three charge carriers involved in the conduction mechanism: one carrier coming from the conduction band and the other two from the complex nature of the valence band. Indeed, two kinds of positive charge carriers with completely different mobilities in the extrinsic region are seen. The extracted parameters are in very good agreement with the intrinsic concentration over a wide temperature range.
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