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Theory of the multiphonon trapping rate

 

作者: A. S. Ioselevich,   E. I. Rashba,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1990）
卷期: Volume 213, issue 1  

页码: 102-109

 

ISSN:0094-243X

 

年代: 1990

 

DOI:10.1063/1.39718

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A theory of the self‐trapping (ST) ratew(T), and also of the rate of the multi‐phonon trapping of charge carriers and excitons by defects is developed in the semiclassical approximation. The preexponential factor inw(T) is estimated in both low‐temperature (instanton) and high‐frequency (Arrhenius) limits.

 

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