Recoil implantation from thin surface films on silicon
作者:
R. Grötzschel,
R. Klabes,
U. Kreissig,
A. Schmidt,
期刊:
Radiation Effects
(Taylor Available online 1978)
卷期:
Volume 36,
issue 3-4
页码: 129-134
ISSN:0033-7579
年代: 1978
DOI:10.1080/00337577808240842
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The recoil implantation yield of copper and gold into silicon substrates under14N+,31P+, and40Ar+ion bombardment has been studied using the backscattering method. The dependence of the yield on the incidence energy follows Sigmund's prediction, excepted at higher energies where enhanced diffusion has been observed. Furthermore, measurements of depth distribution of recoiled atoms have been performed using the neutron activation analysis. The profiles show a maximum at a penetration depth of about 60 Å which is explained by a low-energy cross-section in the energy-depth conversion.
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