Effect of a deep-level trap on hole transport inIn0.5Al0.5As/In0.5Ga0.5Asmetal–semiconductor–metal photodetectors
作者:
Kun-Jing Lee,
F. G. Johnson,
W. B. Johnson,
Junghwan Kim,
Chi H. Lee,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 4
页码: 1808-1811
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590233
出版商: American Vacuum Society
关键词: (In,Al)As;(In,Ga)As
数据来源: AIP
摘要:
The photoresponse ofIn0.5Ga0.5Asmetal–semiconductor–metal photodetectors is related to the presence of a hole trap. Detectors made from material grown with anIn0.5Al0.5Asbuffer layer had no measurable trap density when examined using deep-level transient spectroscopy, and the full width half maximum (FWHM) of the photoresponse was 80 ps at 5 V bias for 3 μm interdigitated fingers and spacings. Detectors made from material grown without anIn0.5Al0.5Asbuffer layer had a hole trap and a FWHM photoresponse of 220 ps. This deep hole trap is likely related to impurities that diffused upward from an interface of an InP substrate and an InGaAs epilayer.
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