Conceptually the use of spreading resistance measurements for two‐dimensional profiling has been introduced two years ago. In the mean time our understanding has improved towards a better interpretation of the experimental results. A simulation program has been realized which allows to simulate the spreading resistance scans along the specially beveled surface. An ‘‘insitu’’ calibration procedure for measuring with high accuracy, the probe size and separation has been developed and a new formula, with less experimental involved parameters, for calculating the lateral spread has been derived. The technique has been applied to a study of the lateral diffusion of B as a function of annealing time. The effect of different masking material (polycrystalline silicon, thick oxide) has been studied. Other recent applications of this technique include the determination of the lateral straggling of channeling implants and the lateral diffusion of transition metals.