The design and operation of a two‐zone furnace and crucible for the evaporation of II–VI semiconducting materials is described. The furnace contains separate heating elements and temperature sensors for each of the zones. The second zone is located at the open end of the furnace. The use of two independently‐controlled temperature zones allows for the elimination of clogging problems that often occur with the evaporation of materials such as tellurium. The pyrolytic boron nitride (PBN) crucible contains a cap with a 2 mm inside diameter and 16 mm long orifice, which is designed to yield higher operating temperatures and better flux stability. A special PBN crucible retainer has also been designed to minimize contact of evaporated material with the tantalum structure of the furnace.