Alteration of Ni silicide formation by N implantation
作者:
L. Wielun´ski,
D. M. Scott,
M.‐A. Nicolet,
H. von Seefeld,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 2
页码: 106-108
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92259
出版商: AIP
数据来源: AIP
摘要:
The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using4He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×1016N/cm2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×1016N/cm2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni2Si) and in rate of growth. For intermediate doses ∼0.9×1016N/cm2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.
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