Capture‐emission process in double Poole–Frenkel well traps: Theory and experiments
作者:
C. Y. Chang,
W. C. Hsu,
S. J. Wang,
S. S. Hau,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 3
页码: 1042-1045
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337395
出版商: AIP
数据来源: AIP
摘要:
The field‐dependent capture‐emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep‐level transient spectroscopic data of GaAs samples grown by molecular‐beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
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