Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells
作者:
C. Narayanswamy,
T. A. Gessert,
S. E. Asher,
期刊:
AIP Conference Proceedings
(AIP Available online 1999)
卷期:
Volume 462,
issue 1
页码: 248-253
ISSN:0094-243X
年代: 1999
DOI:10.1063/1.57902
出版商: AIP
数据来源: AIP
摘要:
Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100&hthinsp;°C to 300&hthinsp;°C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region. ©1999 American Institute of Physics.
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