Impurity‐peak formation during proton‐enhanced diffusion of phosphorus and boron in silicon
作者:
W. Akutagawa,
H.L. Dunlap,
R. Hart,
O. J. Marsh,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 2
页码: 777-782
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326044
出版商: AIP
数据来源: AIP
摘要:
The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton‐beam energies of 50–140 keV, proton‐beam current densities of ∼1 &mgr;A/cm2, and proton‐bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky‐barrier differentialC‐Vtechniques.
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