We report on Cr, Mn, Fe, and Zn redistributions either in undoped and unimplanted, or in doped and implanted indium phosphide substrates. Depth profiles, obtained by secondary ion mass spectrometry, demonstrate that residual impurities, as well as dopants, redistribute during thermal processing and that several parameters govern simultaneously the observed phenomena. Results are interpreted in terms of implantation‐related damage and thermally generated defects, solubility modifications induced by the position of the Fermi level,p‐njunction‐related electric fields, and pure diffusion mechanisms.