首页   按字顺浏览 期刊浏览 卷期浏览 Multiple layer spalling in single‐crystal Al during He ion implantation
Multiple layer spalling in single‐crystal Al during He ion implantation

 

作者: J. Greggi,   W. J. Choyke,   C. F. Tzeng,   C. L. Chamberlain,   N. J. Doyle,   D. M. Matuza,  

 

期刊: Applied Physics Letters  (AIP Available online 1981)
卷期: Volume 38, issue 7  

页码: 528-530

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92439

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Al single crystals were implanted with 150‐keV He+ions at room temperature to fluences high enough to produce several layers of exfoliation. Each exfoliated layer occurs by spalling of the entire bombarded crystal surface, and step height measurements show that the spalling occurs at a depth less than the calculated projected range of the He ions. Preliminary evidence from aligned backscattered (channeling) spectra of exfoliated crystals indicates that the He remaining in the crystal after spalling is in the form of bubbles.

 

点击下载:  PDF (187KB)



返 回