Multiple layer spalling in single‐crystal Al during He ion implantation
作者:
J. Greggi,
W. J. Choyke,
C. F. Tzeng,
C. L. Chamberlain,
N. J. Doyle,
D. M. Matuza,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 7
页码: 528-530
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92439
出版商: AIP
数据来源: AIP
摘要:
Al single crystals were implanted with 150‐keV He+ions at room temperature to fluences high enough to produce several layers of exfoliation. Each exfoliated layer occurs by spalling of the entire bombarded crystal surface, and step height measurements show that the spalling occurs at a depth less than the calculated projected range of the He ions. Preliminary evidence from aligned backscattered (channeling) spectra of exfoliated crystals indicates that the He remaining in the crystal after spalling is in the form of bubbles.
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