Luminescences from localized states in InGaN epilayers
作者:
S. Chichibu,
T. Azuhata,
T. Sota,
S. Nakamura,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2822-2824
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119013
出版商: AIP
数据来源: AIP
摘要:
Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undopedInxGa1−xN(x<0.1)was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states. ©1997 American Institute of Physics.
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