GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium, and trimethylantimony as the sources. As grown layers werep‐type with the carrier concentration in the mid‐1016cm−3range.N‐type layers were grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2×1019cm−3of Te was incorporated. The carrier concentration measured inn‐type samples increased as the temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane, which is a commonn‐type dopant in GaAs and other III–V systems, is shown to behave likep‐type in GaInSb‐.P‐njunction structures have been grown on GaSb substrates to fabricate TPV cells. ©1996 American Institute of Physics.