Defect trapping of ion‐implanted deuterium in Fe
作者:
S. M. Myers,
S. T. Picraux,
R. E. Stoltz,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 9
页码: 5710-5719
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326761
出版商: AIP
数据来源: AIP
摘要:
The trapping of ion‐implanted deuterium (D) by lattice damage in Fe was investigated in the temperature range 90–500 K. The D depth profile was determined by measuring the proton yield from the3He‐excited nuclear reaction D(3He,p)4He, and the D lattice location was obtained by ion channeling. Linear ramping of the temperature produced a sharp detrapping stage at 260 K and a broader release extending over 350–450 K. The release‐vs‐temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.48 and ?0.81 eV for the binding enthalpies associated with the two stages. The 0.48‐eV trap corresponds to D at a near‐octahedral interstitial site, where it is believed to be associated with a vacancy.
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