The kinetics of formation and the parameters of radiation defect clusters in silicon
作者:
V.L. Vinetskii,
A.V. Kondrachuk,
期刊:
Radiation Effects
(Taylor Available online 1976)
卷期:
Volume 30,
issue 4
页码: 227-232
ISSN:0033-7579
年代: 1976
DOI:10.1080/00337577608240826
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
An approximate analytic solution of the system of equations describing the kinetics of formation and the parameters of radiation defect clusters in crystals is obtained. A model corresponding to the real parameters of Si is assumed as a basis for calculation and it is shown that two types of secondary radiation defect clusters may be realized corresponding to the congealing and spreading of the initial vacancy clusters. The cluster type depends on the incident energy of the particle which creates the effects and on the physical parameters of the crystal under irradiation. For a congealing cluster most of the initial vacancies react within the original volume of the damage cascade and for a spreading cluster the final concentration of divacancies andA-centres within the original cascade volume is much less than the initial vacancy concentration, i.e. most of the vacancies form divacancies andA-centres dispersed throughout the crystal volume.
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