Influences of sol-GEL derived thin Pb(Zr0.52Ti0.48)O3layers as a buffer on RF sputtered Pb(Zr0.52Ti0.48)O3thin films
作者:
TaeSong Kim,
JoonHan Kim,
JeonKook Lee,
HyungJin Jung,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 10,
issue 1-4
页码: 55-61
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012263
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
PZT(52/48) films are deposited by using an off-axis rf magnetron sputtering method on Pt/Ti/SiO2/Si(100) substrate. In order to decrease the microcracks which occurs on the surface of rf sputtered PZT films during postannealing at 600, 650 and 700°C, sol-gel derived 10% Pb excess Pb(Zr0.52Ti0.48)O3layers are placed at the top and bottom of the rf sputtered PZT films, respectively. SEM micrographs reveal a drastic reduction of microcracks on the surface of the buffered PZT films. In addition, enhancement of crystallinity is also observed according to XRD analysis. The P-E hysteresis measurements show an increase in remanent polarization (12.1; 22.45, 34.64 μ C/cm2) and a decrease of the coercive field (108, 72.9, 68.3 kV/cm) with the increase of post-annealing temperature.
点击下载:
PDF (624KB)
返 回