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What can we learn about high energy ion scattering from computer simulations

 

作者: E. Steinbauer,   P. Bauer,   J.P. Biersack,   G. Bortels,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1994）
卷期: Volume 130-131, issue 1  

页码: 77-86

 

ISSN:1042-0150

 

年代: 1994

 

DOI:10.1080/10420159408219773

 

出版商: Taylor & Francis Group

 

关键词: High energy ion scattering;plural and multiple scattering response function of silicon detectors

 

数据来源: Taylor

 

摘要:

In this contribution we deal with the influence of plural and multiple scattering of high energy projectiles in two characteristic applications: Rutherford backscattering spectroscopy (RBS) and the response of particle implanted and passivated silicon detectors (PIPS) to monoenergetic MeV alpha particles.

 

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