Critical temperature and ion flux dependence of amorphization in GaAs
作者:
R. A. Brown,
J. S. Williams,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7681-7683
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365347
出版商: AIP
数据来源: AIP
摘要:
The formation of amorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the implantation temperature. For example, we have found that a temperature change of only 6 °C can change the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherford backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux. ©1997 American Institute of Physics.
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