GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors
作者:
Tetsuzo Ueda,
Atsushi Noma,
Daisuke Ueda,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 7,
issue 1-4
页码: 45-60
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508220220
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
GaAs microwave monolithic integrated circuits (MMICs) with Ba1−XSrXTiO3(BST) capacitors have been developed. Spin-coating of sol-gel solution was used to make the BST thin film. The obtained BST film has a dielectric constant of 300 that is 50 times higher than the conventional SiN one. The capacitance has the frequency roll-off over 2 GHz, which is sufficient enough for a variety of consumer applications. The implemented GaAs MMICs with on-chip BST capacitors enable the positive-bias supply and high gain performance as well as the small package outline.
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