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Novel method for measuring and analyzing surface roughness on semiconductor laser etched facets

 

作者: Robert W. Herrick,   Lori G. Sabo,   Joseph L. Levy,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 2778-2783

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585643

 

出版商: American Vacuum Society

 

关键词: ETCHING;ROUGHNESS;MASKING;NONDESTRUCTIVE TESTING;SURFACE ANALYSIS;SCANNING ELECTRON MICROSCOPY;CRYSTAL FACES;OPTOELECTRONIC DEVICES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;FABRICATION

 

数据来源: AIP

 

摘要:

We introduce a method of measuring the surface profile of etched facets on semiconductor lasers, giving direct, quantitative results. Unlike previous techniques which attempt to infer facet quality from electro‐optic performance or subjective analysis of micrographs, this technique provides the actual facet profile. We show how this information can be used for process improvement, and accurate numerical simulation of facet reflectivity.

 

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