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C60thin film transistors

 

作者: R. C. Haddon,   A. S. Perel,   R. C. Morris,   T. T. M. Palstra,   A. F. Hebard,   R. M. Fleming,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 1  

页码: 121-123

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115503

 

出版商: AIP

 

数据来源: AIP

 

摘要:

N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60as the active element. Measurements on C60thin films in ultrahigh vacuum show on‐off ratios as high as 106and field effect mobilities up to 0.08 cm2/V s. ©1995 American Institute of Physics.

 

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