The growth of diamond films by sequentially exposing a heated silicon substrate to fluxes of carbon, atomic hydrogen, and atomic oxygen is reported on. High quality diamond films can be grown sequentially using only the hydrogen and carbon sources. Here the use of an additional source of atomic oxygen is reported on. Film growth for both the possible exposure sequences to the three sources has been attempted. No film is grown if the exposure sequence is carbon‐oxygen‐hydrogen. When the exposure sequence is carbon‐hydrogen‐oxygen it is found that the flux of hydrogen necessary for the growth of high quality diamond films is less than that for runs in which no oxygen is present. The growth rate of diamond is also enhanced up to 500% with atomic oxygen. The role of atomic oxygen in modifying the growth surface is discussed to explain the improvement of growth rate and quality of these films. ©1995 American Institute of Physics.