The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8&OHgr; cm2is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+‐Si system. The formation of ZrSi2is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as‐grown Zr films are 0.61 eV forp‐type Si and 0.52 eV forn‐type Si.