Effects of strain energy on the preferred orientation of TiN thin films
作者:
U. C. Oh,
Jung Ho Je,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 3
页码: 1692-1696
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.355297
出版商: AIP
数据来源: AIP
摘要:
The effects of strain energy on the preferred orientation of TiN thin films were investigated. In the TiN film deposited by plasma‐enhanced chemical‐vapor deposition with a power of 50 W, the overall energy of the film mainly depended on the surface energy because its strain energy was relatively small. The preferred orientation of the film corresponded to the plane with the lowest surface energy, i.e., (200). However, in the TiN film deposited by rf sputtering with a power of 200 W, the overall energy of the film was largely controlled by strain energy due to its large strain energy, and its growth orientation corresponded to the plane with the lowest strain energy, i.e., (111). Furthermore, the preferred orientation of the TiN film was changed from (200) to (111) with the film thickness. It is considered that this phenomenon is due to the increase of strain energy with its thickness.
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