首页   按字顺浏览 期刊浏览 卷期浏览 Ultrafast graded double‐heterostructure GaInAs/InP photodiode
Ultrafast graded double‐heterostructure GaInAs/InP photodiode

 

作者: Y. G. Wey,   D. L. Crawford,   K. Giboney,   J. E. Bowers,   M. J. Rodwell,   P. Silvestre,   M. J. Hafich,   G. Y. Robinson,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 19  

页码: 2156-2158

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104991

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ultrafast graded double‐heterostructure GaInAs/InPp‐i‐nphotodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi‐insulating substrate. The graded band‐gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5 &mgr;m×5 &mgr;m device was measured by electro‐optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.  

 

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