首页   按字顺浏览 期刊浏览 卷期浏览 Band offsets in tetrahedral semiconductors
Band offsets in tetrahedral semiconductors

 

作者: Manuel Cardona,   Niels E. Christensen,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1285-1289

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584250

 

出版商: American Vacuum Society

 

关键词: SEMICONDUCTOR MATERIALS;HETEROJUNCTIONS;VALENCE BANDS;ENERGY GAP;QUANTUM WELL STRUCTURES;GALLIUM ARSENIDES;INDIUM PHOSPHIDES

 

数据来源: AIP

 

摘要:

Experimental and theoretical determinations of the valence band offsets at heterojunctions between tetragonal semiconductors are reviewed. The physical mechanisms underlying the offset are illustrated on the basis of midgap level theories, in particular the dielectric midgap energy version (DME). Results obtained with the DME method for several nearly lattice‐matched heterojunctions are presented and critically compared with experimental data and the results of other theoretical evaluations.

 

点击下载:  PDF (649KB)



返 回