Fast and slow states at the interface of amorphous silicon and silicon nitride
作者:
R. A. Street,
C. C. Tsai,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 24
页码: 1672-1674
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96851
出版商: AIP
数据来源: AIP
摘要:
The effects of a graded composition layer at the amorphous silicon/nitride interface are studied using transient photoconductivity. The graded layer causes a large increase in the density of slow states (electrons trapped within the nitride), but does not influence the fast interface states. The kinetics of trapping and release are measured and a model of field assisted hopping and thermal excitation is proposed. The different origins of slow and fast states are also discussed.
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