Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures
作者:
E. F. Schubert,
Loren Pfeiffer,
K. W. West,
A. Izabelle,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 14
页码: 1350-1352
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100712
出版商: AIP
数据来源: AIP
摘要:
The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is &dgr;‐function‐like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106cm2/V s is obtained at low temperatures in a selectively &dgr;‐doped heterostructure.
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