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Integration technology for ferroelectric memory

 

作者: Hiromitsu Hada,   Nobuhiro Tanabe,   Kzushi Amanuma,   Toru Tatsumi,   Sota Kobayashi,   Takemitsu Kunio,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 257-269

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228473

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric memory;memory cell;embedded memory

 

数据来源: Taylor

 

摘要:

A 1T/2C FeRAM cell technology for high density applications is firstly discussed. 1T/2C FeRA cell with Vcc/2 reference voltage level has been successfully developed for high stable operation of FeRAMs. This structure is promising for high density FeRAMs. This paper also describes CMVP memory cell which is suitable for high performance CMOS logic embedded FeRAM. A PZT capacitor was firstly formed on metal(Al)/via(W) stacked plug using low-temperature MO-CVD process. CMVP memory cell is a candidate of embedded FeRAM in the future.

 

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