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Resonant level lifetime in GaAs/AlGaAs double‐barrier structures

 

作者: Thomas B. Bahder,   Clyde A. Morrison,   John D. Bruno,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 14  

页码: 1089-1090

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98749

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double‐barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high‐frequency experiments.

 

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