Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
作者:
J. J. Wierer,
P. W. Evans,
N. Holonyak,
D. A. Kellogg,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 24
页码: 3468-3470
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120400
出版商: AIP
数据来源: AIP
摘要:
Vertical cavity surface emitting lasers (VCSELs) are demonstrated with reverse-biased tunnel contact junctions allowing low-loss lateral electron current to support hole injection. A compact hybrid vertical cavity is employed consisting of a lower 6.5 periodAlxOy/GaAsdistributed Bragg reflector (DBR) formed by selective oxidation of high Al compositionAlxGa1−xAs,and an electron-beam deposited 5 periodSiO2/Siupper DBR. The cavity (active region) is defined also by selectively oxidizing a current-confining aperture. Lateral electron current drives a tunnel contact junction providing hole injection underneath the upper DBR through the oxide-defined current aperture. Thep-type crystal in the VCSEL is reduced to a minimum, thus reducing resistive loss and device voltage. ©1997 American Institute of Physics.
点击下载:
PDF
(164KB)
返 回