A laser‐assisted photochemically driven etching process has been developed for Hg0.8Cd0.2Te (12 &mgr;m material). It is an etch which does not melt the surface of the material or induce mercury migration. Small geometry features (vias less than 10 &mgr;m in diameter) with straight‐edged sidewalls have been produced. The etching mechanism is a photoenhanced rapid oxidation with subsequent solvation of the oxides.