Electron tunneling into various amorphous semiconductors (Ge, Ge alloys, Si and InSb) resulted in qualitatively similar data: The tunneling conductance increases smoothly and symmetrically with bias voltage and exhibits the same temperature dependence as the conductance of the amorphous semiconductors, which suggests tunneling into localized states. However, the number of localized states deduced from the tunneling experiments is generally higher than the value obtained from conductivity measurements. These tunneling experiments seem to indicate that deep level impurities increase the number of localized states within the mobility gap, leaving the Fermi level at the center of the pseudo‐gap.