Reflection high‐energy electron diffraction intensity oscillations have been used to measure group III and group V controlled incorporation rates. The growth condition for measuring the incorporation rates under control of the group III flux is to have an excess of the group V flux. Conversely, the condition for measuring the incorporation rates under control of the group V arrival rate is to have an excess of the group III flux. At normal growth temperatures the group III controlled incorporation rates are not substrate temperature dependent, while the group V controlled incorporation rates exhibit a growth temperature dependence. The use of incorporation rate ratios is of greater value for growth characterization than the traditional beam equivalent flux ratios, which does not reflect the substrate temperature dependence. Furthermore, group V controlled incorporation rates can be used to set accurate reproducible growth conditions.