A study of the dependence of the transport critical current density (Jc) on the width of Y1Ba2Cu3O7thin‐film microbridges with widths down to 2 &mgr;m has been made. No evidence of edge pinning, which leads to largerJc’s in narrower microbridges, was found. Due to the limitation in resolution of photolithography encountered in common usage, a tapered or radiation damaged edge was always present, which may have introduced a significant error in the cross section and hence in the estimation ofJc. By normalizing the critical current (Ic) to the room‐temperature resistance of the microbridge, we can eliminate this mask‐defined cross‐sectional error.