Diode ideality factor for MOSFETs characterization of dose effect
作者:
E. Bendada,
M.De La Bardonnie,
P. Mialhe,
J.-P. Charles,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1996)
卷期:
Volume 138,
issue 1-2
页码: 39-48
ISSN:1042-0150
年代: 1996
DOI:10.1080/10420159608211507
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
An innovative method for device characterization is developed to qualify radiation effects. A study of radiation induced effects on carrier transport phenomena has been carried out on the body-drain junction of power HEXFETs. A large increase of the recombination current is pointed out. The degradation, by ionizing radiation of the junction ideality factor is shown to be controlled by the total dose. These effects are discussed and related to the oxide-semiconductor interface potential.
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