Growth of clean amorphous silicon–carbon alloy films by hot‐filament assisted chemical vapor deposition technique
作者:
A. S. Kumbhar,
D. M. Bhusari,
S. T. Kshirsagar,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 14
页码: 1741-1743
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113352
出版商: AIP
数据来源: AIP
摘要:
Amorphous silicon–carbon (a‐SiC) alloy films were deposited by using the hot‐filament chemical vapor deposition technique. The gas mixture containing different concentrations of silane in methane with additional dilution in hydrogen formed the source gas. Films were characterized for infrared and optical absorption and Raman scattering. The films deposited under ‘‘starving’’ hot‐filament conditions exhibited properties characteristic of stoichiometric carbon‐freea‐SiC material. ©1995 American Institute of Physics.
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