Dual beam atomic absorption spectroscopy for controlling thin film deposition rates
作者:
S. J Benerofe,
C. H. Ahn,
M. M. Wang,
K. E. Kihlstrom,
K. B. Do,
S. B. Arnason,
M. M. Fejer,
T. H. Geballe,
M. R. Beasley,
R. H. Hammond,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 2
页码: 1217-1220
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587048
出版商: American Vacuum Society
关键词: ELECTRON BEAM EVAPORATION;THIN FILMS;MONITORING;ABSORPTION SPECTROSCOPY;FILM GROWTH;SIGNAL−TO−NOISE RATIO;SENSITIVITY;VACUUM SYSTEMS;SrRuO3
数据来源: AIP
摘要:
We have developed a stable (<1% drift/h at 1 Å/s), fast (∼200 ms), sensitive (S/N∼10–200 at 1 Å/s) evaporation rate monitor for controlling electron beam sources. Based on dual beam atomic absorption spectroscopy (AAS), in which a reference arm compensates for drift in the light source and signal detection apparatus, this technique is very wavelength and hence element specific, allowing many elements to be simultaneously and independently monitored. Furthermore, the system can operate at very high background gas pressures, as well as under ultrahigh vacuum conditions. Also, because only the light must enter the vacuum chamber and pass through the evaporant, minimal periodic maintenance inside the chamber is necessary. The versatility and sensitivity of this AA system make it a viable candidate forinsitumonitoring of various other thin film processes, including sputtering, ion milling, and reactive ion etching.
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