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Degradations in PZT thin film capacitors

 

作者: InKyeong Yoo,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1995)
卷期: Volume 9, issue 1-3  

页码: 117-123

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508012915

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Degradations in ferroelectric capacitors are categorized as DC and AC types. In memory applications, AC type degradations appears to be more serious than those of DC type. Breakdown, for example, occurs earlier under AC operation than DC. AC type degradations were reviewed and induction period was also discussed extensively. An induction mechanism was proposed based on domain rearrangement under AC conditions.

 

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