Degradations in PZT thin film capacitors
作者:
InKyeong Yoo,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 1-3
页码: 117-123
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012915
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Degradations in ferroelectric capacitors are categorized as DC and AC types. In memory applications, AC type degradations appears to be more serious than those of DC type. Breakdown, for example, occurs earlier under AC operation than DC. AC type degradations were reviewed and induction period was also discussed extensively. An induction mechanism was proposed based on domain rearrangement under AC conditions.
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