Measurement of the electron density and the attachment rate coefficient in silane/helium discharges
作者:
C. B. Fleddermann,
J. H. Beberman,
J. T. Verdeyen,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 3
页码: 1344-1348
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.336105
出版商: AIP
数据来源: AIP
摘要:
Measurements of the electron density in dc and pulsed silane/helium discharges show that the addition of silane to the gas mixture causes a large reduction in the electron density. By monitoring the electron decay time in the afterglow, it is found that the dominant electron loss mechanism in silane/helium is not ambipolar diffusion to the walls, but instead is a volumetric loss process, most likely dissociative attachment of electrons to a product of the silane dissociation. A lower bound for the rate coefficient for this loss process has been determined to be 2.65×10−10cm3/sec.
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