Improvement of ultrathin gate oxide and oxynitride integrity using fluorine implantation technique
作者:
Prasenjit Chowdhury,
Anthony I. Chou,
Kiran Kumar,
Chuan Lin,
Jack C. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 37-39
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119297
出版商: AIP
数据来源: AIP
摘要:
The effects of fluorine on ultrathin gate oxide and oxynitride (∼40 Å) have been studied. The incorporation of fluorine was done by fluorine ion implantation into polycrystalline silicon (polysilicon) gate followed by a high-temperature drive-in step. It has been found that the integrity of oxide has been improved with the incorporation of fluorine as demonstrated by the reduction of stress-induced leakage current and interface trap generation. Furthermore, unlike thicker dielectrics (>100 Å) for which the charge-to-breakdown (QBD)values decrease with increasing fluorine concentration,QBD’s remain the same as those of the control samples for the ultrathin thickness regime. The mechanism for oxide quality improvement by F will also be discussed in the letter. ©1997 American Institute of Physics.
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